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Electronic structure of a TlBi alloy formed on Si(111)
Takashi Hayashida, Yuichi Oda, Hirotaka Ishikawa, Yuchi Yaoita, Toru Hazama, and Kazuyuki Sakamoto
Department of Nanomaterials Science, Chiba University, Japan
Heavy elements adsorbed semiconductor surfaces exhibit Rashba split bands owing to their strong spin-orbit coupling. Combining this Rashba effect with valleytronics, a technology of control over the valley degree of freedom, has attracted a large interest from not only a scientific point of view but also from a technological one due to its great possibility for realizing semiconductor spintronics devices. In this talk, we report the electronic structure of a TlBi alloy formed on Si(111). A metallic valley structure with almost linear dispersion was observed around the K point of the surface Brillouin zone of Si(111) together with a Rashba-type splitting at the M point. Details will be discussed on site.