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Exciton dissociation at organic semiconductor interfaces
Takashi Nakayama
Department of Physics, Chiba University, Japan
Exciton dissociation at semiconductor interfaces is one of key processes
to generate electron and hole free carriers in various organic solar-cell
systems. In this work, we study the quantum processes of exciton dissociation
at organic interfaces, by using one/two-dimensional tight-binding model and
calculating time-evolution of electron-hole-pair wave packet, and discuss
the effects of interface energy-level (HOMO/LUMO) offset, interface disorders,
and electron-phonon interaction.